ON SEMICONDUCTOR MJE15035G Bipolar (BJT) Single Transistor, PNP, -350 V, 30 MHz, 50 W, -4 A, 10 hFE FotodioX LENS-NIK-ORANGE 200Vrms Dielectric withstanding voltage

200Vrms Dielectric withstanding voltage

It occupies 1U of rack space

Operating Temperature Min -55°C Capacitor Terminals Radial Leaded Operating Temperature Max 125°C Voltage Rating 50V Product Range MC Series Automotive Qualification Standard - Capacitance 120pF Lead Spacing 5

with microphone

ON SEMICONDUCTOR MJE15035G Bipolar (BJT) Single Transistor, PNP, -350 V, 30 MHz, 50 W, -4 A, 10 hFE FotodioX LENS-NIK-ORANGE 200Vrms Dielectric withstanding voltageThis is a Bipolar (BJT) Single Transistor, PNP, 350 V, 30 MHz, 50 W, 4 A, 10 hFE product from ON SEMICONDUCTOR with the model number MJE15035GProduct details Power Dissipation Pd 50W DC Collector Current 4A Collector Emitter Voltage V(br)ceo 350V Transition Frequency ft 30MHz Operating Temperature Max 150C Transistor Polarity PNP DC Current Gain hFE 10hFE No. of Pins 3Pins Product Range Automotive Qualification Standard AEC Q101 Transistor Case Style